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InGaAs Large Area Photodiode

InGaAs Large Area Photodiode
InGaAs Large Area Photodiode
InGaAs Large Area Photodiode
InGaAs Large Area Photodiode
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Basing on our mature InP wafer processing capability, CLPT is able to provide a series of high quality large area InGaAs PIN photodiode (LAPD).
To meet diverse applications, we provide photodiodes with varius coupling apertures and have them packaged either on the conventional TO-header or inside the ceramic LCC cavity.
Besides, to serve general purpose use, we also extend the cutoff wavelength down to below 450nm and cover the detection range of the Si detector 

Absolute Maximum Ratings:

Parameter Unit Min Max
Operation Temp. Range °C -20 +85
Storage Temp. Range °C -40 +85
Reverse Voltage volts - -20
Reverse Current mA - 10
Forward Current mA - 20


*Note:
TO-46 and 6LCC package for 1mm active area only
TO-39 and 8LCC  package for 2mm active area only


Features:
High Shunt Resistance, low leakage current
High responsivity from 550nm to 1600nm
Wide dynamic range

Applications:
Power monitoring
Covert IR Sensing
Light detection and ranging (LIDAR)
Medical and chemical devices
Remote temprature
sensors
Spectrography
Optical powering